Transient absorption microscopy (TAM), based on femtosecond lasers, has emerged as a powerful tool for investigating the ultrafast excitation dynamics of photoexcited carriers, particularly their real-space transport properties, in solid-state materials. In this seminar, I will introduce the fundamental principles, experimental implementation, and applications of TAM in studying various transport regimes, including classical diffusion, super-diffusion, and ballistic transport, in a range of systems such as 3D and 2D semiconductors, van der Waals heterostructures, and Mott insulators.