Prof. Bian’s research focuses on precise fabrication and spectroscopic characterization of low-dimensional quantum systems and novel electronic materials. He is also interested in the physical properties of new functional materials including their growth mechanism, electronic and magnetic structure, surface and interfacial physics, and quantum size effects. The primary experimental techniques include angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscope (STM) and molecular beam epitaxy (MBE). His group constructed the Missouri Integrated Nano-Analysis System (MINAS) experimental platform. The MINAS system is equipped with APRES, MBE, and STM, which is fully capable of various sample growth and spectroscopic characterizations.

Selected Publications

1. Observation of Unpinned Two-Dimensional Dirac States in Antimony Single Layers with Phosphorene Structure

Q. Lu et al., Nature Communications 13:4603 (2022)

2. Self-Intercalation Tunable Interlayer Exchange Coupling in a Synthetic Van der Waals Antiferromagnet

X. Zhang et al., Advanced Functional Materials 2202977 (2022)

3. Dirac Fermion Cloning, Moiré Flat Bands and Magic Lattice Constants in Epitaxial Monolayer Graphene

Q. Lu et al.,  Advanced Materials 2200625 (2022)

4. Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

X. Zhang et al., ACS Nano 15, 15710 (2021)

5. Weyl, Dirac and high-fold chiral fermions in topological quantum matter

M. Z. Hasan et al., Nature Reviews Materials 6, 784 (2021)

6. Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films

X. Zhang et al., Nature Communications 12:2492 (2021)

7. Realization of Symmetry Enforced Two-Dimensional Dirac Fermions in Nonsymmorphic α-Bismuthene

P. J. Kowalczyk et al., ACS Nano 14, 1888 (2020)